Gallium nitride planted in graphene can be made of curved LED material

This outcome is undoubtedly a major technological breakthrough and a possible means of large-scale, low-cost industrial production for the next generation of electronic and optoelectronic devices. The widespread application of graphene film in the field of materials, will also give birth to more powerful combination of excellent materials, to narrow our distance with the new era.

At present, many electronic and optoelectronic materials made of organic materials have good pliability and are easy to change shape. In the meantime, non-deformable inorganic compounds have shown great performance in the manufacture of optical, electrical and mechanical components. However, due to technical reasons, the two are difficult to complement each other, and inorganic semiconductors with excellent functions have also encountered obstacles in development because of their non-plastic characteristics.

Fortunately, the combination of gallium nitride and graphene, part of the ideal combination of strength to achieve this goal, a "deformation" of the light-emitting diode (LED) material has been born. According to a recent report by the Physicist's Organization, a research group led by Professor Ignatius of Seoul National University in Seoul, has miniature gallium nitride rods planted on the surface of graphene films to make a bendable and retractable LED material , Which means that LED products such as flexible display may appear widely in our lives. The details of the research are published in the journal Applied Physics Letters and Materials published by the American Institute of Physics (AIP).

The properties of ultra-thin graphene films make it an ideal substrate for the group, with excellent flexibility and excellent mechanical strength, and outstanding physical and chemical stability even at temperatures exceeding 1000 ° C. The stable and inactive graphene surface provides a small amount of nucleation sites, which facilitates the growth of gallium nitride onto the graphene surface into the ideal three-dimensional micro-rod structure.

"At the micro or nanostructured GaN, because of its ease of high-density integration and its outstanding color-changing and light-emitting capabilities, it has drawn the attention of the material research community." Iguizhe added that "when combined with graphene substrates , Will be able to withstand mechanical deformation, to further enhance the value of the application. "

In order to truly manufacture GaN LEDs on graphene substrates using gallium nitride, the team used a catalystless organometallic chemical vapor deposition (MOCVD) invented in 2002. "The key to this technology is to control the doping while maintaining high crystallinity so that it forms heterostructures and quantum structures and grows vertically aligned on the underlying substrate," said Iggyiz.

The team then tested the surface of a specially fabricated gallium nitride (LED) thin rod embedded in graphene and found that the bendable LED had excellent and reliable luminescence after being energized, even after 1000 bends After the test, the light-emitting properties of the material is still no significant degradation. Perhaps shortly after, the LED screen, which is free to fold and distort, appears in the streets and even on our own.

This outcome is undoubtedly a major technological breakthrough and a possible means of large-scale, low-cost industrial production for the next generation of electronic and optoelectronic devices. The widespread application of graphene film in the field of materials, will also give birth to more powerful combination of excellent materials, to narrow our distance with the new era.

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